 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 6MBP100RA120 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 100A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 100 200 100 735 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V A A A W C V V mA V mA C C kV N*m N*m Unit DC 1ms DC One transistor Collector power dissipation Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF Condtion VCE=1200V input terminal open Ic=100A -Ic=100A Min. - - - Typ. - - - Max. 1.0 2.6 3.0 Unit mA V V 6MBP100RA120 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IGBT Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM Condition fsw=0 to 15kHz Tc=-20 to 100C *7 fsw=0 to 15kHz Tc=-20 to 100C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature surface of IGBT chips Tj=125C Tj=25C Fig.2 IGBT-IPM Tj=25C Fig.3 Min. Typ. Max. 3 18 10 65 1.00 1.35 1.70 1.70 2.05 2.40 8.0 110 125 20 150 20 150 10 11.0 12.5 0.2 1.5 2 12 1425 1500 1575 Unit mA mA V V V C C C C A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=100A, VDC=600V IF=100A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics(Tc=25C) Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.17 0.36 Unit C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 6MBP100RA120 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 6MBP100RA120 Characteristics (Representative) Control Circuit IGBT-IPM P o we r su p p ly cu rre n t vs. S w itc h in g fre q u e n cy Tj= 1 0 0 C 70 2.5 In p u t s ig n a l th re s h o ld vo lta g e vs . P o w e r s u p p ly vo lta g e In pu t s ign a l th res ho ld v o lta ge Tj= 2 5 C Tj= 1 2 5 C P o we r su p ply c urre n t : Ic c (m A ) P -sid e 60 N -sid e V cc= 17V : V in (on ),V in(o ff) (V ) 2 } V in(o ff) 1.5 } V in(o n) 50 V cc= 15V V cc= 13V 40 30 V cc= 17V V cc= 15V V cc= 13V 10 1 20 0.5 0 0 0 5 10 15 20 25 12 13 14 15 16 17 18 S witc hing fre qu e nc y : fsw (k H z) P ow e r s up p ly v oltag e : V cc (V ) U n d e r vo lta g e v s. J u nc tio n tem p e ra tu re 14 U n d e r vo lta g e h yste ris is vs. Jn c tio n te m p e ra tu re 1 U nde r v oltag e : VU V T (V) 12 U n d e r vo lta g e h ys te ris is : V H (V ) 0.8 10 8 0.6 6 0.4 4 0.2 2 0 20 40 60 80 100 120 140 0 20 40 60 80 10 0 12 0 14 0 J u nc tion tem pe rature : T j (C) J u n c tio n te m p era tu re : T j (C ) O v e r h e ating p ro te c tion : T c O H ,T jO H (C ) A la rm ho ld tim e v s . P o w e r s u p p ly v o lta g e 3 O ve r h e a tin g c h a ra c te ris tic s Tc O H ,T jO H ,T c H ,T jH vs . V c c 20 0 A la r m h o ld tim e : tA L M (m S e c ) O H hys teris is : T cH ,T jH (C ) T jO H 15 0 TcO H 10 0 2.5 T j= 1 25 C 2 T j= 25 C 1.5 1 50 T c H ,T jH 0.5 0 12 13 14 15 16 17 18 0 12 13 14 15 16 17 18 P o w e r s u p p ly v o lta g e : V c c ( V ) P ow e r s up p ly v oltag e : V c c (V ) 6MBP100RA120 Inverter IGBT-IPM C o lle c to r cu rre n t vs. C o lle cto r-E m itte r vo lta g e Tj= 2 5 C 16 0 V cc = 17V V cc = 13V 12 0 10 0 80 60 40 20 0 14 0 V cc = 15V C o lle c to r c u rre n t vs . C o lle cto r-E m itte r vo lta g e T j= 1 2 5 C 160 C o lle c tor C u rre n t : Ic (A ) 140 120 Vcc=13V 100 80 60 40 20 Vcc=15V Vcc=17V C ollec to r C u rre nt : Ic (A) 0 0.5 1 1.5 2 2.5 3 0 0 0 .5 1 1 .5 2 2 .5 3 C o lle cto r-E m itter v o lta ge : V c e (V ) C olle cto r-Em itte r vo lta g e : Vce (V) S w itc h in g tim e vs . C o lle cto r c u rre n t E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 2 5 C S w itch in g tim e : to n ,to ff,tf (n S e c ) 10 000 S w itc h in g tim e vs . C o lle cto r c u rre n t E d c = 6 0 0 V ,V cc =1 5 V ,T j= 1 2 5 C 10 0 0 0 S w itch ing tim e : ton ,to ff,tf (n S e c ) to ff to n to ff 1 000 to n 1 0 00 tf tf 1 00 100 10 0 20 40 60 80 1 00 1 20 C o lle cto r cu rre n t : Ic (A ) 1 40 1 60 10 0 20 40 60 80 100 120 C o lle cto r cu rre n t : Ic (A ) 140 160 F o rw a rd cu rre n t vs . F o rw a rd vo lta g e 160 140 F o rw a rd C u rre n t : If (A ) 120 100 80 60 40 20 0 0 0 .5 1 1 .5 2 2 .5 3 Fo rw ard v o ltag e : V f (V ) 12 5 C 2 5 C Reverse recovery characteristics trr,Irr vs. IF trr125C Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) 100 trr25C Irr125C Irr25C 10 0 20 40 60 80 100 120 Forward current : IF(A) 140 160 6MBP100RA120 IGBT-IPM T h e rm a l re s is ta n c e : R th (j-c ) (C /W ) T ran s ien t th e rm a l re s ista n ce 1 FW D 1 400 C o lle cto r cu rre nt : Ic (A ) 1 200 1 000 8 00 6 00 4 00 2 00 0 0 .0 1 0 .1 1 R e ve rs e d b ia s e d s a fe o p e ra tin g a re a V cc = 1 5 V ,T j < 1 2 5 C = IG B T 0 .1 SC SO A (n on -re pe titiv e p u ls e ) RBSO A (R e p e titiv e p u ls e ) 0 2 00 4 00 6 00 8 00 1 000 1 200 1 400 0 .0 1 0 .0 0 1 P u lse w id th :P w (s e c ) C o llec tor-E m itte r v olta g e : V ce (V ) C o lle c te r P o w e r D is s ip a tio n : P c (W ) P o w e r d e ra tin g fo r IG B T (p e r d e vice ) 8 00 7 00 6 00 5 00 4 00 3 00 2 00 1 00 0 0 20 40 60 80 1 00 1 20 1 40 1 60 C a se T e m p e ra tu re : T c (C ) C o lle c te r P o w e r D is s ip a tio n : P c (W ) 350 300 250 200 150 100 50 0 0 20 P o w e r d e ra tin g fo r F W D (p e r d e vice ) 40 60 80 100 120 140 160 C a se T e m p e ra tu re : T c (C ) S w itc h in g lo ss : E o n ,E o ff,E rr (m J/c yc le ) 40 35 30 25 20 15 E o ff E rr 5 0 0 20 40 60 80 1 00 1 20 1 40 1 60 10 E on S w itc h in g lo ss : E o n ,E o ff,E rr (m J/c yc le ) S w itc h in g L o s s v s . C o lle cto r C u rre n t E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 2 5 C S w itch in g L o ss vs . C o lle cto r C u rre n t E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 1 2 5 C 40 E on 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 E rr E o ff C o llec to r c u rre n t : Ic (A ) C o lle c to r c u rre n t : Ic (A ) 6MBP100RA120 IGBT-IPM O ve r c u rre n t p ro te ction le v e l : Io c (A ) O v e r c u rre n t p ro te ctio n v s . Ju n c tio n te m p e ra tu re V cc = 1 5 V 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 J u nc tio n tem p eratu re : Tj(C ) |
Price & Availability of 6MBP100RA120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |